A DC~1.6 Ghz Distributed Amplifier with GaAs MESFETs

Bahadır HİÇDURMAZ, Cengiz ÖZZAİM
952 336

Abstract


In this study, a DC ~ 1.6 GHz bandwidth distributed amplifier (DA) is fabricated in printed circuit board (PCB). The scattering (S-) parameters of the distributed amplifier are measured and compared with simulated results. In characterization of the amplifier, small-signal microwave S-parameters given at some discrete frequencies of transistors are utilized. According to obtained results, it is observed that measured and simulated results are in relatively good agreement.

Keywords


Distributed amplifier; broadband; S-parameters; PCB fabrication

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DOI: http://dx.doi.org/10.17482/uujfe.81252

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